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SavantIC |
2SC2335 R Rth j-C Thermal resistance junction to case VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W MAX 3.125 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC2335 CHARACTERISTICS |
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Savantic |
2SC3457 se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE= |
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SavantIC |
SILICON POWER TRANSISTOR ain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 MIN 200 2SC3858 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2 |
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SavantIC |
2SC2578 breakdown voltage IC=10mA ;RBE=: V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=3A ; VCE=4V VCE(sat) Collector-emitter sa |
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SavantIC |
2SC3229 er saturation voltage IC=10mA; IB=1m A IC=100µA; IB=0 IE=10µA; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V VCB=240V; IE=0 VEB=5V; IC=0 IE=0; VCB=20V;f=1MHz IE=20mA ; VCB=20V 75 300 1.0 V Collector-emitter breakdown voltage V Emitter-base breakdow |
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SavantIC |
2SC3181 ector-emitter breakdown voltage IC=50mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A VBE Base-emitter voltage IC=4A ; VCE=5V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC |
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SavantIC |
2SC3150 e breakdown voltage IC=1mA ; IE=0 V(BR)EBO Base-emitter breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A VBEsat ICBO IEBO hFE-1 hFE-2 Base-emitter saturation voltage Collector cut-off current Emitter |
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SavantIC |
2SC4419 ecification Silicon NPN Power Transistors 2SC4419 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage B |
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SavantIC |
2SC2579 off current DC current gain Collector-emitter saturation voltage Transition frequency CONDITIONS IC=5mA; IE=0 IC=10mA ;RBE=9 IE=5mA ; IC=0 VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=5A ; IB=0.5A IC=0.5A ; VCE=10V 20 50 2.0 V MHz MIN 160 160 6 0.1 |
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SavantIC |
2SC3179 aturation voltage IC=2A; IB=0.2 A ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=1A ; VCE=4V fT Transition frequency IE=-0.2A ; VCE=12V COB Output capacitance f=1MHz ; VCB=10V |
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SavantIC |
2SC3320 4U.com CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE= |
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SavantIC |
2SC1398 NS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 2SC1398 2SC1398A IC=10mA ,IB=0 50 70 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A VBEsat Base-emitter |
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SavantIC |
2SC2168 itter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 IC=0.5A ;IB=50m A VCB=200V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V 50 |
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SavantIC |
SILICON POWER TRANSISTOR 0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage I |
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SavantIC |
SILICON POWER TRANSISTOR ctor cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A VCB=140V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V IE=0 ; VCB=10V, f=1MHz 115 30 MIN 8 |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=7A; IB=0.7A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; V |
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SavantIC |
SILICON POWER TRANSISTOR ter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDIT |
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SavantIC |
SILICON POWER TRANSISTOR ctor cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.5A IB=50mA IC=0.5A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 MI |
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SavantIC |
2SC2681 ollector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE -1 DC current gain IC=1A ; VCE=2V hFE -2 DC current gain IC=4.5A ; VCE=2V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=1A ; V |
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SavantIC |
2SC4662 |
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Desde 2024. D4U Semiconductor.
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