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2SC4106 SILICON POWER TRANSISTOR

2SC4106


2SC4106
Part Number 2SC4106
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2SC4106

Sanyo Semicon Device
2SC4106
Part Number 2SC4106
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 .
Features
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 2.55 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol.

2SC4106

INCHANGE
2SC4106
Part Number 2SC4106
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.
Features Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC.

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