Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC4102 |
| Part Number | 2SC4102 |
| Manufacturer | GME |
| Title | Silicon Transistor |
| Description | Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC4102 TP/TR/TS SOT-323 Package Code SOT-323 M. |
| Features |
Excellent hFE linearity. Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC4102 TP/TR/TS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitte. |
2SC4102 |
| Part Number | 2SC4102 |
| Manufacturer | Kexin |
| Title | High-voltage Amplifier Transistor |
| Description | SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation. |
| Features | High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Para. |
2SC4102 |
| Part Number | 2SC4102 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | 2SC4102 TRANSISTOR (NPN) FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation . |
| Features |
High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 50 200 625 150 -55～+150 Unit V V . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4100 |
ROHM |
NPN Silicon Transistor |
|
| 2 | 2SC4102W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor |
|
| 3 | 2SC4104 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SC4104 |
Kexin |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC4105 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC4105 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SC4105 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC4106 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | 2SC4106 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC4106 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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