Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SC4793 |
| Part Number | 2SC4793 |
| Manufacturer | UTC |
| Title | NPN SILICON TRANSISTOR |
| Description | UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications ORDERING INFORMATION Order Number Lead Free Halogen Free Package 2SC4793L-x-TF3-T 2SC4793G-x-TF3-. |
| Features | *High transition frequency *Power amplifier applications *Driver stage amplifier applications ORDERING INFORMATION Order Number Lead Free Halogen Free Package 2SC4793L-x-TF3-T 2SC4793G-x-TF3-T TO-220F Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R219-. |
2SC4793 |
| Part Number | 2SC4793 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications 2SC4793 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collecto. |
| Features | esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown vol. |
2SC4793 |
| Part Number | 2SC4793 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE . |
| Features | IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 100mA ; VCE= 10V 2SC4793 MIN T. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4791 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC4793AF |
NELL SEMICONDUCTOR |
High Frequency NPN Power Transistor |
|
| 3 | 2SC4793D |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SC4796 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC4796 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC4797 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC4799 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC4702 |
Renesas |
NPN Transistor |
|
| 10 | 2SC4702 |
Kexin |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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