2SC4793 |
Part Number | 2SC4793 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA1837 ·Minimum Lot-to-Lot variations for robust device performance and reliable o... |
Features |
IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 230V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 100mA ; VCE= 10V
2SC4793
MIN TYP. MAX UNIT
230
V
1.5
V
1.0
V
1.0 μA
1.0 μA
100
320
20
pF
100
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. ... |
Document |
2SC4793 Data Sheet
PDF 207.67KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC4791 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4793 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC4793 |
UTC |
NPN SILICON TRANSISTOR | |
4 | 2SC4793 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC4793AF |
NELL SEMICONDUCTOR |
High Frequency NPN Power Transistor | |
6 | 2SC4793D |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |