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Samsung semiconductor |
128K x8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: 0.4 µm CMOS • Organization: 128K x8 • Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-SOP-525, 32-TSO |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabric |
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Samsung semiconductor |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: Full CMOS • Organization: 256K x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 2V(Min) • Three State Outputs • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X4016T3F families are fabricated |
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Samsung Semiconductor |
1M x 8-Bit Low Power and Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The KM688100 families are |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 1.65~1.95V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-FBGA-6.00 x 7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F1616 |
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Samsung semiconductor |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM • • • • • • GENERAL DESCRIPTION The K6F1008V2C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The fa |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 3.0 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF) CMOS SRAM GENERAL DESCRIPTION The K6F2008V |
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Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabric |
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Samsung semiconductor |
512K x 8 bit Low Power and Low Voltage CMOS Static RAM |
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Samsung semiconductor |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X8008C2B familie |
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Samsung semiconductor |
LOW VOLTAGE AUDIO AMPLIFIER • • • • • • • • Wide Supply Voltage (2 ~ 16V) Low Quiescent Supply Current (ICC = 2.7mA : Typ) Easy Gain Control Medium Output Power PO = 250mW at VCC = 6V, RL = 32Ω, THD = 10% Minimum External Parts Various Load Impedance Range (8Ω ∼ 100Ω) Low Disto |
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Samsung semiconductor |
Low Power and Low Voltage CMOS Static RAM • Process Technology : TFT • Organization : 32Kx8 • Power Supply Voltage KM62V256D family : 2.7~3.3V KM62U256D family : 3.0~3.6V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 28-SOP-450 28-TSOP1-0813. |
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Samsung semiconductor |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three state output • Package Type: 48-TBGA-9.00x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6M families are fabrica |
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Samsung semiconductor |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The K6T8008C2M families ar |
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Samsung Semiconductor |
Low Voltage Speech Network • Adjust Sending and Receiving Attenuation Length • Mute Function • Side Tone Balance Network Constitution • Low Voltage Operating • AC Impedance Matching • Uses in Inexpensive Components (5 Capacitors & 10 Resistors) • Uses a minimum of external com |
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Samsung semiconductor |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM Draft Data May 26, 1998 October 8, 1998 July 21, 1999 Remark Advance Final Final 2.01 October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specificatio |
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Desde 2024. D4U Semiconductor.
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