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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating juncti |
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STMicroelectronics |
Trench gate field-stop IGBT Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution Safe paralleling Low thermal resistance Applications Photovoltaic inverters Uninterruptible power sup |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c ■ Worldwide best RDS(on) * area amongst the usilicon based devices rod ■ Higher VDSS rating P ■ High dv/dt capability te ■ Excellent switching performance le ■ |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1 |
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STMicroelectronics |
STW60N10 n Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Unit STH60N10FI V V V 36 22 240 70 0.56 4000 -65 |
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STMicroelectronics |
650 V field stop trench gate IGBT ■ ■ ■ ■ ■ ■ High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications ■ ■ ■ ■ ■ TO-3P Photovoltaic inverters Uninterruptible power |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Low VF soft recovery co-packaged di |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal re |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1 |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffic |
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STMicroelectronics |
field stop trench gate IGBT ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Very fast soft recovery antiparallel diode ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterrup |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c ■ Worldwide best RDS(on) * area amongst the usilicon based devices rod ■ Higher VDSS rating P ■ High dv/dt capability te ■ Excellent switching performance le ■ |
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STMicroelectronics |
N-CHANNEL MOSFET 3 2 1 TO-247 Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V <0.043 Ω 68 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic |
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STMicroelectronics |
field stop trench gate IGBT Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H6 |
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STMicroelectronics |
Silicon carbide Power MOSFET Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • S |
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STMicroelectronics |
IGBT ■ IPM 40 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■ Very high switching speed IGBTs ■ VCE(sat) negative temperature coefficient ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull |
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Desde 2024. D4U Semiconductor.
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