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STGW60H65DFB |
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| Part Number | STGW60H65DFB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between con... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between ... |
| Document |
 STGW60H65DFB Data Sheet
PDF 685.37KB |
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Desde 2024. D4U Semiconductor.
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