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STGW60H65DFB-4 |
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| Part Number | STGW60H65DFB-4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | (2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compro... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters DescriptionE(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between cond... |
| Document |
 STGW60H65DFB-4 Data Sheet
PDF 551.64KB |
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Desde 2024. D4U Semiconductor.
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