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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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STMicroelectronics |
Single-Chip Worldwide iDTV Processor ics and On-Screen Display ■ Auxiliary Video/Graphics Sub-System for Monitor output ■ Exhaustive set of peripherals for DTV Chassis Control ■ DDR333 Unified Memory Interface (LMI) ■ Programmable External Memory Interface (EMI) ■ CRT and Flat Panel Dis |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD20NF06LAG VDS 60 V RDS(on) max. 40 mΩ ID 24 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge PTOT 60 W Applications G(1) • Switching applications S(3) Description AM01475v1_noZen T |
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STMicroelectronics |
Gate Driver with VReg and Two Point Regulator ption Name Pin Number Type VCC VOUT IN GATE GND VSUP VCAP 1 Power supply 2 Analog output 4 Digital input 5 Analog output 6 Power supply 7 Power supply 8 Power supply Function Supply capacitor and startup resistor +3.3V (TD220) or + |
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STMicroelectronics |
N-channel Power MOSFET Type STD26NF10 ■ ■ ■ ■ VDSS 100V RDS(on) < 0.038Ω ID 25A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization DPAK 3 1 Description This Power MOSFET series realized with |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD2NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A Applications • Switching applications Description AM01476v1_tab This high-vol |
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STMicroelectronics |
N-CHANNEL 700V - 6W - 1.6A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET TYPE STD2NK70Z STD2NK70Z-1 s s s s s s STD2NK70Z - STD2NK70Z-1 www.DataSheet4U.com Figure 1: Package ID 1.6 A 1.6 A Pw 45 W 45 W 7Ω 7Ω VDSS 700 V 700 V RDS(on) TYPICAL RDS(on) = 6 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AV |
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STMicroelectronics |
N-CHANNEL 700V - 6W - 1.6A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET TYPE STD2NK70Z STD2NK70Z-1 s s s s s s STD2NK70Z - STD2NK70Z-1 www.DataSheet4U.com Figure 1: Package ID 1.6 A 1.6 A Pw 45 W 45 W 7Ω 7Ω VDSS 700 V 700 V RDS(on) TYPICAL RDS(on) = 6 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AV |
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STMicroelectronics |
N-Channel MOSFET TYPE STD2NK90Z STD2NK90Z-1 STP2NK90Z s s s s s s s Figure 1: Package ID 2.1 A 2.1 A 2.1 A Pw 70 W 70 W 70 W 3 1 VDSS 900 V 900 V 900 V RDS(on) < 6.5 Ω < 6.5 Ω < 6.5 Ω TYPICAL RDS(on) = 5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 1 |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate |
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STMicroelectronics |
N-CHANNEL MOSFET TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A s WORLDWIDE LOWEST GATE CHARGE s TYPICAL RDS(on) = 0.088 Ω s HIGH dv/dt and AVALANCHE CAPABILITIES s LOW INPUT CAPACITANCE s LOW GATE RESISTANCE DESCRIPTION This 200V MOSFET with a new adv |
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STMicroelectronics |
P-channel Power MOSFET Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1 Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate |
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STMicroelectronics |
P-CHANNEL POWER MOSFET Order code STD20P3H6AG VDS -30 V RDS(on) max. 50 mΩ ID -20 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Swit |
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STMicroelectronics |
Low voltage fast-switching PNP power transistor ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4) ■ Through-hole IPAK (TO-251) power package in tube (suffix “-1”) D |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STD25N10F7 STF25N10F7 STP25N10F7 VDSS 100 V 100 V 100 V RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω ID 25 A 19 A 25 A PTOT 40 W 25 W 50 W 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested Applications • Switching applic |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDSS STD2LN60K3 STF2LN60K3 STU2LN60K3 600 V RDS(on) max < 4.5 Ω ID 2A ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected PT |
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STMicroelectronics |
N-channel Power MOSFET TYPE VDSS RDS(on) ID Pw STF2NK60Z STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 600 V 600 V 600 V 600 V <8Ω <8Ω <8Ω <8Ω 1.4 A 0.4 A 1.4 A 1.4 A 20 3W 45 W 45 W s TYPICAL RDS(on) = 7.2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ESD IMPROVED CAPABILITY s 100 |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD2NK90ZT4 900 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 6.5 Ω ID 2.1 A Applications • Switching applications Description AM01476v1_tab This high-volt |
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STMicroelectronics |
N-channel Power MOSFET TAB 3 2 1 IPAK D(2, TAB) Order code VDS STD2NK90Z-1 900 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 6.5 Ω ID 2.1 A • Switching applications G(1) Description |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applicatio |
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Desde 2024. D4U Semiconductor.
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