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STD20P3H6AG |
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| Part Number | STD20P3H6AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order... |
| Features |
Order code STD20P3H6AG
VDS -30 V
RDS(on) max. 50 mΩ
ID -20 A
Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD20P3H6AG AM11258v1 Table 1: Device summary Marking Package 20P3H6 DPAK Packing Tape and reel September... |
| Document |
 STD20P3H6AG Data Sheet
PDF 583.31KB |
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