STD28P3LLH6AG |
Part Number | STD28P3LLH6AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code ... |
Features |
Order code
VDS
STD28P3LLH6AG -30V
RDS(on) max.
0.030Ω
ID PTOT -12A 33W
Figure 1: Internal schematic diagram D(2, TAB)
G(1)
S(3)
AM11258v1
Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD28P3LLH6AG Table 1... |
Document |
STD28P3LLH6AG Data Sheet
PDF 572.49KB |
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