STMicroelectronics P55 Hoja de datos

No.	parte #	Fabricante	Descripción
1	55N06L	STMicroelectronics	STP55N06L
2	BCP55	STMicroelectronics	MEDIUM POWER AMPLIFIER ction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Colle
3	P55NF06FP	STMicroelectronics	N-channel MOSFET Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications
4	P55NE06	STMicroelectronics	STP55NE06 SIZE™ ” POWER MOSFET TYPE ST P55NE06 ST P55NE06FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 30 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPL
5	P55NF06L	STMicroelectronics	STP55NF06L Type STP55NF06L STB55NF06L STB55NF06L-1 VDSS 60V 60V 60V RDS(on) <0.018Ω <0.018Ω <0.018Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 55A 55A 55A Description This Power MOSFET is the latest d
6	P55N06L	STMicroelectronics	STP55N06L