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P55NE06 |
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| Part Number | P55NE06 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged ... |
| Features |
= 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor V ISO dv/dt T stg Tj Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Uni t
STP55NE06FP 60 60 ± 20 V V V 30 21 220 35 0.27 2000 7 A A A W W/ C V V/ ns
o o o
55 39 220 130 0.96
-65 to 175 175
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
C C 1/9
( •) Pulse width limited by safe operating area January 1998 www... |
| Document |
 P55NE06 Data Sheet
PDF 138.53KB |
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