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BCP55 |
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| Part Number | BCP55 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | BCP55/56 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED... |
| Features |
ction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8
o o
C/W C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 30 V V CB = 30 V I C = 100 µ A for BCP55 for BCP56 I C = 20 mA for BCP55 for BCP56 I C = 100 µ A for BCP55 for BCP56 I C = 10 µ A T j = 125 o C 60 100 60 80 60 100 5 Min. Typ. Max. 100 10 Unit nA µA V V V V V V V V (BR)CEO ∗ Collector-Emitter Breakdown... |
| Document |
 BCP55 Data Sheet
PDF 71.85KB |
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Desde 2024. D4U Semiconductor.
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