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STMicroelectronics |
STP4NK60Z TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
STP4NK80Z www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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STMicroelectronics |
STP4NB80FP DS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drai |
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STMicroelectronics |
STP4NK80ZFP www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A 3 1 1 3 2 3 1 2 STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 ■ ■ ■ ■ ■ TO-220 TO-220FP Extremely high dv/dt capability 100% a |
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STMicroelectronics |
STP4NB80 DS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drai |
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STMicroelectronics |
STP4NA60FI Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insu |
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STMicroelectronics |
N-CHANNEL MOSFET kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope |
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STMicroelectronics |
N-channel Power MOSFET e Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area -65 to 150 oC 150 oC February 1999 1/8 STP4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal R |
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STMicroelectronics |
N-channel Power MOSFET e Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area -65 to 150 oC 150 oC February 1999 1/8 STP4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal R |
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STMicroelectronics |
STP4NA60FI •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C |
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STMicroelectronics |
N-CHANNEL Power MOSFET TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
N-Channel MOSFET • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolida |
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STMicroelectronics |
STP4NK50Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plasti |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu ■ High dv/dt and avalanche capabilities te P ■ Improved ESD capability le ■ Low input capacitance and gate charge o ■ Low gate input resista |
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STMicroelectronics |
N-CHANNEL MOSFET |
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STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt cap |
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STMicroelectronics |
N-CHANNEL Power MOSFET TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applic |
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STMicroelectronics |
N-CHANNEL MOSFET ter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode R |
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STMicroelectronics |
N-CHANNEL MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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Desde 2024. D4U Semiconductor.
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