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4NA60FI |
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| Part Number | 4NA60FI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP4NA60FI 600 600 ± 30 4.3 2.8 17.2 100 0.8 -65 to 150 150 2.7 1.8 17.2 40 0.32 2000
Unit
V V V A A A W W/o C V
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C C
( •) Pulse width limited by safe operating area November 1996 1/10 Free Datasheet http://www.0PDF.com STP4NA60/FI THERMAL D... |
| Document |
 4NA60FI Data Sheet
PDF 221.26KB |
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