P4N20 |
Part Number | P4N20 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A s TYPICAL RDS(on) = 1.3 Ω s AVALANCHE RUGGED TECHNOLOGY ) s 100% AVALANCHE ... |
Features |
e Temperature
Tj Max. Operating Junction Temperature
( •) Pulse width limited by safe operating area -65 to 150 oC 150 oC February 1999 1/8 STP4N20 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.08 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 4 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy ) (star... |
Document |
P4N20 Data Sheet
PDF 265.43KB |