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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 600 35 200 − 65 to +200 W mA V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82003 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditio |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81058 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 0 35 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82005 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO B |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS C TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 150 3.0 55 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS emperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81118 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.12 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81400M ELECTRICAL SPECIFICATIONS (T case = |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS tion-Case Thermal Resistance* 25 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC81402 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE DYNAMIC S |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 00 35 200 − 65 to +200 W mA V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82001 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC82100 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVE |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/3 MSC82307 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICBO |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80185 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA |
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STMicroelectronics |
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS lies only to rated RF amplifier operation October 1992 1/6 MSC80186 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18 |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80195 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VC |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS s only to rated RF amplifier operation October 1992 1/6 MSC80196 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V V |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS C/W *Applies only to rated RF amplifier operation October 1992 1/6 MSC80197 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS ature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81002 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVC |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS age* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81005 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS RTH(j-c) Junction-Case Thermal Resistance* 6.0 °C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81010 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CB |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS r operation October 1992 1/5 MSC81020 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 5mA IE = 1mA IC = 15mA VCB = 28V VCE = 5V IE = 0mA IC = 0m |
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Desde 2024. D4U Semiconductor.
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