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MSC82307 |
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| Part Number | MSC82307 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MSC82307 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase ang... |
| Features |
RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/3
MSC82307
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICBO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V
IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA
44 3.5 44 — 30
— — — — —
— — — 0.5 300
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
POUT ηc GP COB
f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz
PIN = 0.76 W PIN = 0.76 W PIN = 0.76 W VCB = 22 V
VCC = 22 V VCC = 22 V VCC = 2... |
| Document |
 MSC82307 Data Sheet
PDF 71.41KB |
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