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MSC82100 |
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| Part Number | MSC82100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for ... |
| Features |
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W
*Applies only to rated RF amplifier operation
October 1992
1/6
MSC82100
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO I CEO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
45 3.5 20 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
G P* ∆ GP * COB
* Note:
f = 1.0 GHz f = 1.0 GHz f = 1 MHz
POUT = 27 dBm POUT = 27 dBm VCB = 28 V ∆POUT = 10 dB
10.5 — —
11.5 —... |
| Document |
 MSC82100 Data Sheet
PDF 112.62KB |
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