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STMicroelectronics |
short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re |
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STMicroelectronics |
20 A - 600 V - short circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Descripti |
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STMicroelectronics |
IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS • PFC Description E(3) NG1E3C2T These devices |
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STMicroelectronics |
600V short-circuit rugged IGBT Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Short-circuit withstand time 10 μs IGBT co-packaged with ultrafast free- wheeling diode Applications High frequency inverters Motor drives Descripti |
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STMicroelectronics |
very fast IGBT • Low on-voltage drop (VCE(sat)) • Very soft ultrafast recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description These devices are ultrafast IGBT. They utilize the a |
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STMicroelectronics |
600V short-circuit rugged IGBT Low on voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency inverters SMPS and PFC in both hard s |
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STMicroelectronics |
low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working |
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STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ |
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STMicroelectronics |
short circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode )Applications t(s ■ High frequency inverters uc ■ Mo |
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STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation t(s)Applications c ■ High frequency motor drives u ■ SMPS and PFC in both hard switch and dresonant topologies ProDescription leteThis IGBT utilizes the advanced PowerMESH™ oprocess resulti |
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STMicroelectronics |
600V short-circuit rugged IGBT Low on voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross-conduction susceptibility) Very soft ultrafast recovery antiparallel diode Short-circuit withstand time 10 μs Applications High frequency inverters SMPS and PFC in both hard s |
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STMicroelectronics |
very fast IGBT ■ Low www.DataSheet4U.com ■ Low ■ on-voltage drop (VCE(sat)) 3 1 1 3 2 CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery anti-parallel diode D²PAK TO-220 Applications ■ ■ ■ High frequency motor controls SMPS a |
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STMicroelectronics |
19 A - 600 V - ultra fast IGBT ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the adv |
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STMicroelectronics |
short-circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s ■ Tight parameter distribution uc ■ Ultrafast soft-recovery antiparallel diode d ■ Short-circuit rugged P |
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STMicroelectronics |
short-circuit rugged IGBT ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c ■ High frequency motor controls u ■ SMPS and PFC in both hard switch and dresonant topologies ro ■ Motor drives te PDescription oleThis device utilizes the advanced |
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STMicroelectronics |
IGBT Type STGB14NC60K STGD14NC60K VCES VCE(sat) (Max)@ 25°C IC @100°C 600V 600V <2.5V <2.5V 14A 14A ■ Low on-voltage drop (Vcesat) ■ Low Cres / Cies ratio ( no cross conduction susceptibility) ■ Short circuit withstand time 10µs Description Using |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
600V short-circuit rugged IGBT Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Short-circuit withstand time 10 μs IGBT co-packaged with ultrafast free- wheeling diode Applications High frequency inverters Motor drives Descripti |
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STMicroelectronics |
very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation t(s)Applications c ■ High frequency motor drives u ■ SMPS and PFC in both hard switch and dresonant topologies ProDescription leteThis IGBT utilizes the advanced PowerMESH™ oprocess resulti |
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STMicroelectronics |
600V short-circuit rugged IGBT ■ Short circuit withstand time 10µs. ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Very soft ultra fast recovery antiparallel diode Applications ■ High |
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Desde 2024. D4U Semiconductor.
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