GB19NC60K |
Part Number | GB19NC60K |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior. 1 TO-220 D2PAK Figure 1. Internal schematic d... |
Features |
■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode )Applications t(s ■ High frequency inverters uc ■ Motor drivers rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior. 1 TO-220 D2PAK Figure 1. Internal schematic diagram lete Product(s) - ObTable 1. Device summary soOrder codes Marking ObSTGB19NC60KT4 GB19NC60K Package D2PAK Pac... |
Document |
GB19NC60K Data Sheet
PDF 518.20KB |
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