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GB19NC60KD |
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| Part Number | GB19NC60KD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Order code ST... |
| Features |
Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Short-circuit withstand time 10 μs IGBT co-packaged with ultrafast free- wheeling diode Applications High frequency inverters Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Order code STGB19NC60KDT4 STGF19NC60KD STGP19NC60KD Table 1: Device summary Marking Package GB19NC60KD D²PAK GF19NC60KD TO-220FP GP19NC60KD TO-220 Pac... |
| Document |
 GB19NC60KD Data Sheet
PDF 1.03MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | GB19NC60K |
STMicroelectronics |
short circuit rugged IGBT |
|
| 2 | GB19NC60H |
STMicroelectronics |
very fast IGBT |
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| 3 | GB19NC60HD |
STMicroelectronics |
very fast IGBT |
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| 4 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
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| 5 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
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| 6 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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