| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
NPN Silicon Power Transistor CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Colle |
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STMicroelectronics |
2/2.5A BIPOLAR STEPPER MOTOR DRIVE MODULES Wide supply voltage range Full/Half step drive capability Logic signals TTL/CMOS compatible Programmable motor phase current and chopper frequency Selectable Slow/Fast current decay Synchronization for multimotor applications Remote shut-down Home po |
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STMicroelectronics |
3A monolithic step-down current source • 3.0 V to 18 V operating input voltage range • 850 kHz fixed switching frequency • 100 mV typ. current sense voltage drop • PWM dimming • ± 7% output current accuracy • Synchronous rectification • 95 mΩ HS / 69 mΩ LS typical RDS(on) • Peak current m |
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STMicroelectronics |
60V field-effect rectifier diode ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Description The device is based on a proprietary technology that achieves the best in class |
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STMicroelectronics |
N-channel Power MOSFET Type STD20NF20 STF20NF20 STP20NF20 ■ ■ ■ VDSS RDS(on) ID 18 A 18 A 18 A PW 110 W 30 W 110 W 1 3 2 200 V < 0.125 Ω 200 V < 0.125 Ω 200 V < 0.125 Ω 3 1 2 TO-220FP TO-220 Exceptional dv/dt capability Low gate charge 100% avalanche tested 1 3 D |
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STMicroelectronics |
4A monolithic step-down current source • 3.0 V to 18 V operating input voltage range • 850 kHz fixed switching frequency • 100 mV typ. current sense voltage drop • PWM dimming • ± 7% output current accuracy • Synchronous rectification • 95 mΩ HS/ 69 mΩ LS typical RDS(on) • Peak current mo |
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STMicroelectronics |
4-channel high-side driver Channel 0, 1 2, 3 VCC 28 V RON typ. 6.7 mΩ 20 mΩ ILIMH typ. 72 A 34.5 A • AEC-Q100 qualified • General – Extreme low voltage operation for deep cold cranking applications (compliant with LV124, revision 2013) – 24-bit ST-SPI for full diagnostic a |
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STMicroelectronics |
60V field-effect rectifier diode ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Description The device is based on a proprietary technology that achieves the best in class |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 5 10 57 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 December 1999 THD200FI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO |
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STMicroelectronics |
Single-Chip Worldwide iDTV Processor ics and On-Screen Display ■ Auxiliary Video/Graphics Sub-System for Monitor output ■ Exhaustive set of peripherals for DTV Chassis Control ■ DDR333 Unified Memory Interface (LMI) ■ Programmable External Memory Interface (EMI) ■ CRT and Flat Panel Dis |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STD20NF06LAG VDS 60 V RDS(on) max. 40 mΩ ID 24 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge PTOT 60 W Applications G(1) • Switching applications S(3) Description AM01475v1_noZen T |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STD20NF06L 60 V 40 mΩ 24 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 60 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET h |
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STMicroelectronics |
2/2.5A BIPOLAR STEPPER MOTOR DRIVE MODULES Wide supply voltage range Full/Half step drive capability Logic signals TTL/CMOS compatible Programmable motor phase current and chopper frequency Selectable Slow/Fast current decay Synchronization for multimotor applications Remote shut-down Home po |
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STMicroelectronics |
100V field-effect rectifier diode • ST advanced rectifier process • Stable leakage current over reverse voltage • Reduced leakage current • Low forward voltage drop • High frequency operation • Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS sine • ECOPACK2 compliant com |
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STMicroelectronics |
Memory Micromodules d on Super 35 mm metallized epoxy tape, and are delivered on reels. These contain all of the chips from a number of wafers, including those chips that were found to be non-functioning during testing. Traceability is ensured by a label fixed on the re |
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STMicroelectronics |
NPN Silicon Power Transistor CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Colle |
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STMicroelectronics |
Field effect rectifier • ST proprietary process • Stable leakage current over reverse voltage • Low forward voltage drop • High frequency operation Field effect rectifier Datasheet - production data Description This single rectifier is based on a proprietary technology, |
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STMicroelectronics |
High power LED driver • AEC-Q100 qualified • General – ST SPI communication v4.1 – 5.5 to 24 V Operating battery voltage range – Load dump protected – QFN40L 6x6 (wettable flanks) with exposed pad – Timeout watchdog and limp home function – Low standby current • Buck sect |
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STMicroelectronics |
MEMS motion sensor • Three selectable full scales (250/500/2000 dps) • 2 I C/SPI digital output interface • 16 bit-rate value data output • 8-bit temperature data output • Two digital output lines (interrupt and data ready) • Integrated low- and high-pass filt |
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STMicroelectronics |
MEMS motion sensor • Wide supply voltage, 2.2 V to 3.6 V • Wide extended operating temperature range (from -40 °C to 85 °C) • Low voltage compatible IOs, 1.8 V • Low power consumption • Embedded power-down • Sleep mode • Fast turn-on and wake-up • Three select |
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Desde 2024. D4U Semiconductor.
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