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THD200FI |
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| Part Number | THD200FI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The THD200FI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for us... |
| Features |
5 10 57 -65 to 150 150
Uni t V V V A A A A W
o o
C C 1/7
December 1999
THD200FI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.2
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Tj = 125 o C Min. Typ . Max. 0.2 2 100 Un it mA mA µA V
V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I C = 0) V EBO V CE(sat )∗ V BE(s at)∗ h FE∗ Emitter-Base Voltage (I B = 0) Collector-E... |
| Document |
 THD200FI Data Sheet
PDF 81.07KB |
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