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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES ERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C T |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rect |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 0.7 1 V Unit mA DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rect |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54 |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap recti |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54 |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54 |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV54 |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODES < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 Unit mA 10 Tj = 25°C 0.55 0.85 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions VR = 0 Min. Typ. 220 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority c |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE in. Typ. Max. 0.5 10 Unit mA Tj = 25°C 0.7 1 V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit pF Forward current flow in a Schottky rectifier is due to majority carrier conductio |
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Desde 2024. D4U Semiconductor.
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