No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
NPN Transistor |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR A A A W o o C C June 1998 1/6 BUL39D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo |
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STMicroelectronics |
High voltage fast-switching NPN Power Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devic |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 1 2 ■ ■ 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP Description |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness Applications ■ Electronic transformers for halogen lamps ■ Flyback and forward single transi |
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STMicroelectronics |
NPN Transistor c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 10 18 3.5 7 100 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL67 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Ther |
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STMicroelectronics |
NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ) ■ Very high switching speed t(s ■ Fully characterized at 125 °C ducApplications ro ■ Electronic transformer for halogen lamps P ■ Electronic ballast for fluor |
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STMicroelectronics |
NPN Transistor |
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STMicroelectronics |
NPN Transistor ) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 20 -65 to 150 150 Uni t V V V A A A |
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STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ ■ ■ ■ ■ High voltage capability Minimum lot-to-lot spread for reliable operation Low base drive requirements Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220 Applications |
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STMicroelectronics |
High voltage fast-switching NPN power transistors ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness Applications ■ Electronic transformers for halogen lamps ■ Flyback and forward single transi |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting (277 V push-pull and 347 V half bridge topoligies) |
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STMicroelectronics |
High voltage fast-switching NPN Power Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devic |
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