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BUL128 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet

BUL128D-B Bipolar Transistors - BJT High volt fast-switching NPN power transistor


STMicroelectronics
BUL128
Part Number BUL128
Manufacturer STMicroelectronics (https://www.st.com/)
Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l...
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Document Datasheet BUL128 datasheet pdf (234.15KB)
Distributor Distributor
Mouser Electronics
Stock 3178 In Stock
Price
1 units: 0.68 USD
10 units: 0.56 USD
100 units: 0.407 USD
500 units: 0.34 USD
1000 units: 0.279 USD
2000 units: 0.249 USD
5000 units: 0.239 USD
10000 units: 0.226 USD
25000 units: 0.223 USD
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




BUL128 Distributor

part
STMicroelectronics
BUL128
TRANSISTOR, NPN, TO-220
5000 units: 312 KRW
1000 units: 340 KRW
500 units: 390 KRW
100 units: 451 KRW
10 units: 534 KRW
5 units: 635 KRW
Distributor
element14 Asia-Pacific

0 In Stock
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part
STMicroelectronics
BUL128
트랜지스터 - 양극(BJT) - 단일 NPN 400V 4A 70W 스루홀 TO-220
No price available
Distributor
DigiKey

0 In Stock
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part
STMicroelectronics
BUL128D-B
Bipolar Transistors - BJT High volt fast-switching NPN power transistor
1 units: 0.68 USD
10 units: 0.56 USD
100 units: 0.407 USD
500 units: 0.34 USD
1000 units: 0.279 USD
2000 units: 0.249 USD
5000 units: 0.239 USD
10000 units: 0.226 USD
25000 units: 0.223 USD
Distributor
Mouser Electronics

3178 In Stock
BuyNow BuyNow
part
STMicroelectronics
BUL128D-B
High voltage fast-switching NPN power transistor
1 units: 0.67 USD
10 units: 0.55 USD
100 units: 0.4 USD
500 units: 0.33 USD
Distributor
STMicroelectronics

3178 In Stock
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part
STMicroelectronics
BUL128D-B
Transistor Bipolar NPN 400V 4A TO220, TU
250 units: 3.942 HKD
50 units: 4.38 HKD
Distributor
RS

20 In Stock
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part
STMicroelectronics
BUL128DB
Trans GP BJT NPN 400V 4A 70000mW 3-Pin(3+Tab) TO-220AB Tube
5000 units: 0.24 USD
2000 units: 0.2458 USD
1000 units: 0.2737 USD
Distributor
Verical

2950 In Stock
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part
STMicroelectronics
BUL128D-B
4A, 400V, NPN, SI, POWER TRANSISTOR, TO-220AB
11 units: 0.4125 USD
1 units: 0.495 USD
Distributor
Quest Components

37 In Stock
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part
STMicroelectronics
BUL128D-B
Transistor: NPN; bipolar; 400V; 4A; 70W; TO220AB
1000 units: 0.313 USD
500 units: 0.323 USD
250 units: 0.359 USD
100 units: 0.411 USD
50 units: 0.455 USD
10 units: 0.557 USD
1 units: 0.646 USD
Distributor
TME

39 In Stock
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part
STMicroelectronics
BUL128FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
Distributor
ComSIT Asia

450 In Stock
No Longer Stocked
part
STMicroelectronics
BUL128D-B
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: BUL128D-B)
8000 units: 0.24985 USD
5000 units: 0.25522 USD
3000 units: 0.26059 USD
Distributor
Avnet Americas

0 In Stock
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BUL128 Similar Datasheet

Part Number Description
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 11...
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This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102E...
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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCES Collector-Emitter Voltage VBE= 0 1100 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THER...
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MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collect...
BUL118
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage o (I C = 0, I B <1.5A, tp <10 µ s, Tj < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current ...
BUL118D
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Inchange Semiconductor
Silicon NPN Power Transistor
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 6A 1.5 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 3 60 150 -65~150 A W ℃ ℃ THERM...
BUL118D
manufacturer
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) To...
BUL1203
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-BaseVoltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector ...
BUL1203E
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High voltage fast-switching NPN power transistor
The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Product status link BUL1203E Product summary Order code BUL1203E Marking BUL1203E Package TO-220 Packing Tube DS2301 - Rev 4 - April 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings T...
BUL1203E
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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...




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