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BUL1102E STMicroelectronics High voltage fast-switching NPN power transistor Datasheet

BUL1102E TRANSISTOR, NPN, TO-220


STMicroelectronics
BUL1102E
BUL1102E
Part Number BUL1102E
Manufacturer STMicroelectronics (https://www.st.com/)
Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic r...
Features

■ High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 1 2

■ 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstan...

Document Datasheet BUL1102E datasheet pdf (302.22KB)
Distributor Distributor
element14 Asia-Pacific
Stock 406 In stock
Price
5000 units: 842 KRW
1000 units: 947 KRW
500 units: 1076 KRW
100 units: 1269 KRW
10 units: 1606 KRW
1 units: 1957 KRW
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




BUL1102E Distributor

part
STMicroelectronics
BUL1102E
TRANSISTOR, NPN, TO-220
5000 units: 842 KRW
1000 units: 947 KRW
500 units: 1076 KRW
100 units: 1269 KRW
10 units: 1606 KRW
1 units: 1957 KRW
Distributor
element14 Asia-Pacific

406 In stock
BuyNow BuyNow
STMicroelectronics
BUL1102E
TRANS NPN 450V 4A TO220
5000 units: 0.56997 USD
2500 units: 0.59847 USD
1250 units: 0.63574 USD
500 units: 0.78042 USD
250 units: 0.91196 USD
100 units: 0.9207 USD
50 units: 1.1618 USD
Distributor
DigiKey

65 In stock
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STMicroelectronics
BUL1102E
Bipolar Transistors - BJT High volt fast-switching NPN power transistor
1 units: 1.45 USD
10 units: 1.17 USD
100 units: 0.94 USD
500 units: 0.797 USD
1000 units: 0.649 USD
2000 units: 0.598 USD
5000 units: 0.569 USD
10000 units: 0.543 USD
Distributor
Mouser Electronics

1104 In stock
BuyNow BuyNow
STMicroelectronics
BUL1102E
High voltage fast-switching NPN power transistor
1 units: 1.42 USD
10 units: 1.15 USD
100 units: 0.92 USD
500 units: 0.78 USD
Distributor
STMicroelectronics

1104 In stock
BuyNow BuyNow
STMicroelectronics
BUL1102E
2000 units: 0.336 USD
Distributor
Future Electronics

0 In stock
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STMicroelectronics
BUL1102EFP
216 units: 2.1548 USD
81 units: 2.3205 USD
1 units: 4.9725 USD
Distributor
Quest Components

760 In stock
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part
STMicroelectronics
BUL1102E
Transistor: NPN; bipolar; 450V; 4A; 70W; TO220AB; 1.23÷1.32mm
500 units: 0.83 USD
100 units: 0.9 USD
50 units: 0.98 USD
10 units: 1.18 USD
1 units: 1.38 USD
Distributor
TME

120 In stock
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part
STMicroelectronics
BUL1102E
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
Distributor
ComSIT Asia

350 In stock
No Longer Stocked
part
STMicroelectronics
BUL1102E
Trans GP BJT NPN 450V 4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: BUL1102E)
6000 units: 0.36061 USD
4000 units: 0.36836 USD
2000 units: 0.37612 USD
Distributor
Avnet Americas

0 In stock
BuyNow BuyNow
part
STMicroelectronics
BUL1102E
Trans GP BJT NPN 450V 4A 3-Pin(3+Tab) TO-220 Tube (Alt: BUL1102E)
No price available
Distributor
Avnet Silica

2000 In stock
BuyNow BuyNow





Similar Datasheet

Part Number Description
BUL1101E
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 11...
BUL1102E
manufacturer
INCHANGE
NPN Transistor
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCES Collector-Emitter Voltage VBE= 0 1100 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THER...




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