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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
HIGH VOLTAGE AMPLIFIER at ) * Collector-base Breakdown Voltage (IE = 0 ) Collector-emitter Breakdown Voltage (IB = 0 ) Emiter-base Breakdown Voltage (IC = 0 ) Collector-emitter Saturation Voltage VBE ( sat) * Base-emitter Saturation Voltage h F E * DC Curent Gain fT C |
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STMicroelectronics |
HIGH VOLTAGE AMPLIFIER E (s at ) * Collector-base Breakdown Voltage (IE = 0 ) Collector-emitter Breakdown Voltage (IB = 0 ) Emitter-base Breakdown Voltage (IC = 0 ) Collector-emitter Saturation Voltage VBE ( sat) * Base-emitter Saturation Voltage hFE * fT C CBO DC Cure |
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STMicroelectronics |
N-Channel Power MOSFET o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 20 3.6 2.3 14 75 0.6 3 - |
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Desde 2024. D4U Semiconductor.
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