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IRFBC30 |
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| Part Number | IRFBC30 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg... |
| Features |
o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value 600 600 ± 20 3.6 2.3 14 75 0.6 3 -65 to 150 150
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C
( •) Pulse width limited by safe operating area January 2000 1/8 IRFBC30 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink ... |
| Document |
 IRFBC30 Data Sheet
PDF 85.59KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC30 |
Inchange Semiconductor |
TO-220C N-Channel MOSFET Transistor |
|
| 2 | IRFBC30 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFBC30 |
Vishay |
Power MOSFET |
|
| 4 | IRFBC30 |
INCHANGE |
TO-220 N-Channel MOSFET |
|
| 5 | IRFBC30A |
International Rectifier |
Power MOSFET |
|
| 6 | IRFBC30A |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|