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| Part Number | IRFBC30 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFBC30 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOSFET |
| Description | The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH S. |
| Features |
o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value 600 600 ± 20 3.6 2.3 14 75 0.6 3 -65 to 150 150
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C
( •) Pulse width limited by safe . |
| Part Number | IRFBC30 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRFBC30 |
| Manufacturer | Inchange Semiconductor |
| Title | TO-220C N-Channel MOSFET Transistor |
| Description | ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V . |
| Features |
·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Contin. |
| Part Number | IRFBC30 |
| Manufacturer | INCHANGE |
| Title | TO-220 N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor IRFBC30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage . |
| Features |
·Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC30A |
International Rectifier |
Power MOSFET |
|
| 2 | IRFBC30A |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFBC30A |
Vishay |
Power MOSFET |
|
| 4 | IRFBC30AL |
Vishay |
Power MOSFET |
|
| 5 | IRFBC30APBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRFBC30AS |
International Rectifier |
Power MOSFET |
|
| 7 | IRFBC30AS |
Vishay |
Power MOSFET |
|
| 8 | IRFBC30L |
International Rectifier |
Power MOSFET |
|
| 9 | IRFBC30L |
Vishay |
Power MOSFET |
|
| 10 | IRFBC30S |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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