BC337-40 |
Part Number | BC337-40 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s TO-92 PACKAGE SUITABLE FOR THROUGH-HO... |
Features |
/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
VCB = 20 V VCB = 20 V
TC = 150 oC
IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗
Emitter Cut-off Current (IC = 0)
Collector-Base Breakdown Voltage (IE = 0)
Collector-Emitter Breakdown Voltage (IB = 0)
Emitter-Base Breakdown Voltage (IC = 0)
Collector-Emitter Saturation Voltage
VEB = 5 V IC = 10 µA IC = 10 mA IE = 10 µA IC = 500 mA
IB = 50 mA
VBE(on)∗ Base-Emitter On Voltage
IC = 500 mA
VCE = 1 V
hFE∗ DC Current Gain
IC = 100 mA for ... |
Document |
BC337-40 Data Sheet
PDF 35.72KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BC337-40 |
NXP |
NPN general purpose transistor | |
2 | BC337-40 |
ON Semiconductor |
Amplifier Transistors | |
3 | BC337-40 |
Siemens |
NPN Silicon AF Transistors | |
4 | BC337-40 |
Taiwan Semiconductor |
NPN Transistor | |
5 | BC337-40 |
MCC |
NPN Plastic-Encapsulate Transistors | |
6 | BC337-16 |
NXP |
NPN general purpose transistor | |
7 | BC337-16 |
ON Semiconductor |
Amplifier Transistors | |
8 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
9 | BC337-16 |
Siemens |
NPN Silicon AF Transistors | |
10 | BC337-16 |
Taiwan Semiconductor |
NPN Transistor |