Busque con el número de pieza junto con el fabricante o la descripción
BC337-40 |
Click to view a larger image
| Part Number | BC337-40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY s THE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELY APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LO. |
| Features | /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage VEB = 5 V IC = 10 µA IC = 10 mA IE = 10 µA IC = 500 mA IB = 50 mA VBE(on)∗ Base-Emitter On Voltage IC = 500 mA VCE = 1 V hFE∗ DC Current Gain IC = 100 mA for . |
| Datasheet |
 BC337-40 Data Sheet
PDF 35.72KB |
| Distributor | Stock | Price | Buy |
|---|
BC337-40 |
| Part Number | BC337-40 |
| Manufacturer | NXP |
| Title | NPN general purpose transistor |
| Description | NPN general-purpose transistors. Table 1. Product overview Type number Package NXP BC817 SOT23 BC817W SOT323 BC337[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement BC807 BC807W BC327 1.2 Features High current . |
| Features | High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC817; BC817W; BC337 IC = 100 mA; VCE = 1 V BC817-16; BC817-16W; BC337-16 BC817-25; BC. |
BC337-40 |
| Part Number | BC337-40 |
| Manufacturer | ON Semiconductor |
| Title | Amplifier Transistors |
| Description | BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCB. |
| Features |
• These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Stor. |
BC337-40 |
| Part Number | BC337-40 |
| Manufacturer | MCC |
| Title | NPN Plastic-Encapsulate Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Ca. |
| Features | x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings x Operating temperature : -55к to +150к x Storage temperature : -55к to +150к Electrical Characteristics @ 25к Unless Otherwise Specified Symbol Parameter Min Max Uni. |
BC337-40 |
| Part Number | BC337-40 |
| Manufacturer | Siemens |
| Title | NPN Silicon AF Transistors |
| Description | NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q6. |
| Features |
mA
mW ˚C
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 – – BC 338 25 – – Collector-base breakdown volta. |
BC337-40 |
| Part Number | BC337-40 |
| Manufacturer | Taiwan Semiconductor |
| Title | NPN Transistor |
| Description | Green compound Green compound Green compound Green compound Document Number: DS_S1407004 Version: B14 Small Signal Product PACKAGE OUTLINE DIMENSIONS TO-92 Bulk BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor DIM. A B C D E F G H I Unit (mm) Min 4.30 Max 5.10 4.30 4.70 12.50 14.50 . |
| Features | - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin pla. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC337-16 |
NXP |
NPN general purpose transistor |
|
| 2 | BC337-16 |
ON Semiconductor |
Amplifier Transistors |
|
| 3 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 4 | BC337-16 |
Siemens |
NPN Silicon AF Transistors |
|
| 5 | BC337-16 |
Taiwan Semiconductor |
NPN Transistor |
|
| 6 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 7 | BC337-16 |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 8 | BC337-25 |
Multicomp |
Bipolar Transistors |
|
| 9 | BC337-25 |
NXP |
NPN general purpose transistor |
|
| 10 | BC337-25 |
ON Semiconductor |
Amplifier Transistors |
|
Desde 2024. D4U Semiconductor.
|