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BC337-25 |
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| Part Number | BC337-25 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc . |
| Features |
• These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 45 50 5.0 800 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Juncti. |
| Datasheet |
 BC337-25 Data Sheet
PDF 102.99KB |
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BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | Siemens |
| Title | NPN Silicon AF Transistors |
| Description | NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q6. |
| Features |
mA
mW ˚C
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 – – BC 338 25 – – Collector-base breakdown volta. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL NPN TRANSISTORS |
| Description | BC337-25 ® BC337-40 Type BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking BC337-25 BC337-40 s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY s THE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELY APPLICATIONS s . |
| Features | /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Co. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | Taiwan Semiconductor |
| Title | NPN Transistor |
| Description | Green compound Green compound Green compound Green compound Document Number: DS_S1407004 Version: B14 Small Signal Product PACKAGE OUTLINE DIMENSIONS TO-92 Bulk BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor DIM. A B C D E F G H I Unit (mm) Min 4.30 Max 5.10 4.30 4.70 12.50 14.50 . |
| Features | - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin pla. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | NXP |
| Title | NPN general purpose transistor |
| Description | NPN general-purpose transistors. Table 1. Product overview Type number Package NXP BC817 SOT23 BC817W SOT323 BC337[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement BC807 BC807W BC327 1.2 Features High current . |
| Features | High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC817; BC817W; BC337 IC = 100 mA; VCE = 1 V BC817-16; BC817-16W; BC337-16 BC817-25; BC. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | MCC |
| Title | NPN Plastic-Encapsulate Transistors |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Ca. |
| Features | x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Maximum Ratings x Operating temperature : -55к to +150к x Storage temperature : -55к to +150к Electrical Characteristics @ 25к Unless Otherwise Specified Symbol Parameter Min Max Uni. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | BC337-16 / BC337-25 BC337-16 BC337-25 Discrete POWER & Signal Technologies E BC TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absol. |
| Features | Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C u. |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | TO-18 OPTION STD LEADCLIP DIMENSION NO LEAD CLIP J05Z NO EOL CODE L34Z TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 NO LEAD CLIP NO LEADCLIP NO LEADCLIP QUANTITY 2.0 K /. |
| Features | 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions . |
BC337-25 |
| Part Number | BC337-25 |
| Manufacturer | Multicomp |
| Title | Bipolar Transistors |
| Description | Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Top View Pin Configuration: 1. Collector 2. Base 3. Emitter Dimensions A B C D E F G H K L Minimum 4.32 4.45 3.18 0.41 0.35 1.14 1.20 12.70 1.982 Maximum 5.33 5.. |
| Features | in Free Air Rth (j-a) 200 °C/W Electrical Characteristics (Ta = 25°C unless specified otherwise) Description Symbol Test Condition Minimum Maximum Unit Collector Emitter Voltage VCEO IC = 1mA, IB = 0 45 Collector Emitter Voltage VCES IC = 100µA, IE = 0 50 Emitter Base Voltage Collector Cut off Current Emitter Cut off Current VEBO IE = 10µA, IC = 0 5.0 ICBO VCB = 20V, IE = 0 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC337-16 |
NXP |
NPN general purpose transistor |
|
| 2 | BC337-16 |
ON Semiconductor |
Amplifier Transistors |
|
| 3 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 4 | BC337-16 |
Siemens |
NPN Silicon AF Transistors |
|
| 5 | BC337-16 |
Taiwan Semiconductor |
NPN Transistor |
|
| 6 | BC337-16 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 7 | BC337-16 |
MCC |
NPN Plastic-Encapsulate Transistors |
|
| 8 | BC337-40 |
NXP |
NPN general purpose transistor |
|
| 9 | BC337-40 |
ON Semiconductor |
Amplifier Transistors |
|
| 10 | BC337-40 |
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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