| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Type VDSS RDS(on) max RDS(on)* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s) ■ Extremely high dv/dt capability du ■ 100% avalanche tested ro ■ Gate charge minimized P ■ Very low intrinsic capacitances te ■ Very good manufacturing repeatability sole |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Type STP200NF03 STB200NF03 STB200NF03-1 VDSS 30V 30V 30V RDS(on) <0.0037Ω <0.0037Ω <0.0037Ω 1. Current Limited by Package ■ Standard threshold drive ■ 100% avalanche tested ID 120A(1) 120A(1) 120A(1) Description This Power MOSFET is the latest |
|
|
|
|
STMicroelectronics |
TRISIL BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT, |
|
|
|
|
STMicroelectronics |
STW34NB20 Type www.DataSheet4U.com STW34NB20 Figure 1. Package RDS(on) < 0.075 Ω ID 34 A VDSS 200 V STW34NB20 FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE |
|
|
|
|
STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS STB20N90K5 900 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on ) max. 0.25 Ω ID 20 A Applications • Switching applications D |
|
|
|
|
STMicroelectronics |
STB20NE06L Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC |
|
|
|
|
STMicroelectronics |
very fast IGBT ■ ■ ■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications ■ ■ ■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Appli |
|
|
|
|
STMicroelectronics |
IGBT Prod t(s) DESCRIPTION lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collec |
|
|
|
|
STMicroelectronics |
very fast IGBT • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capability Applications • High frequency inverters • UPS, motor drivers • HF, SMPS and PFC in both hard switch and resonant topologi |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS 600V 600V 600V 600V 600V RDS(on) < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitan |
|
|
|
|
STMicroelectronics |
IGBT • AEC-Q101 qualified • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 200 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 ° |
|
|
|
|
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
|
|
|
|
STMicroelectronics |
Automotive-grade 450V internally clamped IGBT • AEC-Q101 qualified • SCIS energy of 300 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • G |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Type STB20NF06L STF20NF06L STP20NF06L VDSS 60V 60V 60V RDS(on) <0.07Ω <0.07Ω <0.07Ω ID 20A 20A (1) 20A 1. Refer to SOA for the max allowable current value on FP-type due to Rth value ■ Avalanche rugged technology ■ 100% avalanche tested ■ 175°C |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Type STB200N4F3 STP200N4F3 ■ ■ VDSS 40V 40V RDS(on) Max <0.0040Ω <0.0044Ω ID 120A 120A Pw 300W 300W 3 1 1 2 3 100% avalanche tested Standard threshold drive D²PAK TO-220 Applications ■ Switching applications – Automotive Description Figure 1 |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB200N04 ■ VDSS 40V RDS(on) <0.0040Ω ID 120A Pw 300W 100% avalanche tested drive 1 3 www.DataSheet4U.com ■ Standard threshold Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” str |
|
|
|
|
STMicroelectronics |
STD7NB20 ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation |
|
Desde 2024. D4U Semiconductor.
|