W34NB20 |
Part Number | W34NB20 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
Features |
Type
www.DataSheet4U.com
STW34NB20
Figure 1. Package
RDS(on) < 0.075 Ω ID 34 A
VDSS 200 V
STW34NB20
FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala... |
Document |
W34NB20 Data Sheet
PDF 269.68KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | W3455QK200 |
IXYS |
Rectifier Diode | |
2 | W3455QK220 |
IXYS |
Rectifier Diode | |
3 | W3477MC360 |
IXYS |
Rectifier Diode | |
4 | W3477MC380 |
IXYS |
Rectifier Diode | |
5 | W3477MC400 |
IXYS |
Rectifier Diode | |
6 | W34F3C |
Kingbright Corporation |
T-1 (3mm) INFRA-RED EMITTING DIODE |