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20NE06L |
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| Part Number | 20NE06L |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,... |
| Features |
continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o o
Value 60 60 ± 20 20 14 80 70 0.47 7 -65 to 175 175
( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
( •) Pulse width limited by safe operating area Free Datasheet http://www.datasheet4u.net/ STB20NE06L THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resista... |
| Document |
 20NE06L Data Sheet
PDF 101.67KB |
Desde 2024. D4U Semiconductor.
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