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STMicroelectronics |
N-Channel MOSFET 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$. Figure 1. Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C max |
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STMicroelectronics |
POSITIVE VOLTAGE REGUALTOR FOR BATTERY CHARGER is a reverse leakage current (Max 10µA at TJ =0 to 40oC VIN = floating and VOUT = 13.7V). It is available in TO-220 and it employs internal current limiting, thermal shut-down and safe area protection, making it essentially indestructible. If adequat |
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STMicroelectronics |
N-channel MOSFET Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Descr |
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STMicroelectronics |
TRISIL BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. UL RECOGNIZED FILE # E136224 DESCRIPTION The TPB series are TRISIL devices especially desi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' RU |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) max STB13NK60ZT4 STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω ID 13 A 13 A 13 A 13 A Pw 150 W 35 W 150 W 150 W ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very g |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS RDS(on) ID PTOT STB13N80K5 190 W STF13N80K5 800 V STP13N80K5 STW13N80K5 0.45 Ω 12 A 35 W 190 W • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switchin |
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STMicroelectronics |
N-channel Power MOSFET Order code STB130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 160 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applica |
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Desde 2024. D4U Semiconductor.
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