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STB13NM60N |
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| Part Number | STB13NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to ... |
| Features |
TAB
3 1
D²PAK
TAB
3 1 DPAK
Order code VDS (@Tjmax) RDS(on) max
STB13NM60N STD13NM60N
650 V
0.36 Ω
ID 11 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% * 6 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit... |
| Document |
 STB13NM60N Data Sheet
PDF 648.70KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | STB13NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB13NM60ND |
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N-Channel MOSFET |
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| 3 | STB13N60M2 |
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| 4 | STB13N80K5 |
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| 5 | STB13NK60Z |
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| 6 | STB13NK60Z |
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|
Desde 2024. D4U Semiconductor.
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