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STB130N6F7 |
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| Part Number | STB130N6F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STB130N6F7
VDS 60 V
RDS(on) max. 5.0 mΩ
ID 80 A
PTOT 160 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STB130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 13... |
| Document |
 STB130N6F7 Data Sheet
PDF 705.80KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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