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STMicroelectronics |
STD9NM60N Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
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STMicroelectronics |
Power MOSFET Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 |
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STMicroelectronics |
Power MOSFET Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 |
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STMicroelectronics |
Power MOSFET Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 |
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STMicroelectronics |
N-channel Power MOSFET Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1 3 2 2 1 7.5A 7.5A 7.5A(1) 3 1 IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche test |
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STMicroelectronics |
N-channel Power MOSFET Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1 3 2 2 1 7.5A 7.5A 7.5A(1) 3 1 IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche test |
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STMicroelectronics |
N-channel Power MOSFETs Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ' 7$% * 6 Des |
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STMicroelectronics |
N-channel Power MOSFETs Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ' 7$% * 6 Des |
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STMicroelectronics |
N-channel Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-ch |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low |
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STMicroelectronics |
N-channel Power MOSFET Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
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STMicroelectronics |
N-Channel MOSFET 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low in |
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STMicroelectronics |
N-channel Power MOSFET 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low in |
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STMicroelectronics |
Power MOSFET Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 |
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STMicroelectronics |
Power MOSFET Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 |
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STMicroelectronics |
N-channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD9NM50N 500 V 790 mΩ 5A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S |
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STMicroelectronics |
N-channel Power MOSFETs Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ' 7$% * 6 Des |
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STMicroelectronics |
N-channel Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-channel Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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Desde 2024. D4U Semiconductor.
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