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STW19NM60N |
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| Part Number | STW19NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to y... |
| Features |
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
'
3
Order code
VDS (@Tjmax)
STW19NM60N 650 V
RDS(on) max.
ID PTOT
0.285 Ω 13 A 110 W
• Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-r... |
| Document |
 STW19NM60N Data Sheet
PDF 544.55KB |
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Desde 2024. D4U Semiconductor.
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