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STF9NM50N |
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| Part Number | STF9NM50N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lo... |
| Features |
Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID
3
7.5A
1
3 2
2 1
7.5A 7.5A 7.5A(1)
3 1
IPAK TO-220
1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for... |
| Document |
 STF9NM50N Data Sheet
PDF 506.68KB |
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Desde 2024. D4U Semiconductor.
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