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STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STF13NM60N 600 V 360 mΩ 11 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power M |
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STMicroelectronics |
STD9NM60N Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description This seri |
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STMicroelectronics |
STW25NM60N Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating juncti |
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STMicroelectronics |
N-channel MOSFET Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N- |
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STMicroelectronics |
N-channel Power MOSFET TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistan |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
STL26NM60N Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOM VIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance |
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STMicroelectronics |
N-channel Power MOSFET Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested Low input capacitance and gate charge Low gate input resist |
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STMicroelectronics |
N-channel Power MOSFET Order code STF260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Descrip |
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STMicroelectronics |
N-Channel MOSFET 72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB21NM60N )STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N 650 V 650 V 650 V 650 V 650 V < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω 17 A 17 A 17 A(1) 17 A 17 A rod1. Limited by maximum temperature allo |
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STMicroelectronics |
STY60NK30Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te ■ |
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STMicroelectronics |
N-CHANNEL MOSFET Order codes STFW60N65M5 t(s)STW60N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.059 Ω ID 46 A c ■ Worldwide best RDS(on) * area amongst the usilicon based devices rod ■ Higher VDSS rating P ■ High dv/dt capability te ■ Excellent switching performance le ■ |
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STMicroelectronics |
N-channel Power MOSFET TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistan |
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STMicroelectronics |
N-channel Power MOSFET Type STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω ID 3 3 1 2 21 A 21 A 21 A(1) 21 A 21 A 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 2 |
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STMicroelectronics |
N-Channel MOSFET Order code VDS @ TJ max RDS(on) max. ID t(s) 3 c 2 1 du TO-247 lete Pro D(2, TAB) STW23NM60ND 650 V • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 1 D²PAK TAB 3 2 |
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Desde 2024. D4U Semiconductor.
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