STB8NM60N |
Part Number | STB8NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the ... |
Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB8NM60N
t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N
650 V 650 V 650 V 650 V 650 V
< 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω
7A 7A 7A 7 A(1) 7A
P1. Limited only by maximum temperature allowed
te ■ 100% avalanche tested le ■ Low input capacitance and gate charge so ■ Low gate input resistance ObApplication ) - ■ Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one o... |
Document |
STB8NM60N Data Sheet
PDF 619.34KB |
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