W25NM60N |
Part Number | W25NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology. This P t(srevolutionary MOSFET associates a new vertical te cstructure to the company’s strip layout to y... |
Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB25NM60N
t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N
650 V 650 V 650 V 650 V 650 V
< 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω
21 A 21 A 21 A(1) 21 A 21 A
P t(s1. Limited only by maximum temperature allowed
te c ■ 100% avalanche tested le du ■ Low input capacitance and gate charge so ro ■ Low gate input resistance - Ob te PApplication ) le ■ Switching applications ct(s bsoDescription du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology. This P t(srevolutionary MOSFET associates a new vertica... |
Document |
W25NM60N Data Sheet
PDF 548.83KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | W25N01GV |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
2 | W25N02JW |
Winbond |
1.8V 2G-BIT SERIAL SLC NAND FLASH MEMORY | |
3 | W25N02KW |
Winbond |
1.8V 2G-BIT SLC QSPINAND FLASH MEMORY | |
4 | W2512 |
TT electronics |
Precision Thin Film Chip Resistors | |
5 | W255 |
Cypress Semiconductor |
200-MHz 24-Output Buffer | |
6 | W256 |
Cypress Semiconductor |
12 Output Buffer for 2 DDR and 3 SRAM DIMMS |