STMicroelectronics 26N Hoja de datos

No.	parte #	Fabricante	Descripción
1	26NM60N	STMicroelectronics	STL26NM60N Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
2	STFI26NM60N	STMicroelectronics	N-channel Power MOSFET Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A  Fully insulated and low profile package with increased creepage path from pin to heatsink plate  100% avalanche tested  Low input capacitance and gate charge  Low gate input resist
3	STE26NA90	STMicroelectronics	ISOTOP FAST POWER MOSFET 0 3.6 -55 to 150 150 2500 Un it V V V A A A W W /o C o o C C V 1/8 ( •) Pulse width limited by safe operating area October 1998 www.DataSheet4U.com STE26NA90 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance C
4	STF26NM60N-H	STMicroelectronics	N-channel MOSFET Type STF26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 Application ■ TO-220FP Switching applications Description This series of devices impl
5	STB26NM60ND	STMicroelectronics	N-Channel MOSFET Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabiliti
6	STP26NM60ND	STMicroelectronics	N-Channel MOSFET Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabiliti
7	STFI26N60M2	STMicroelectronics	N-channel Power MOSFET Order code VDS RDS(on) max. ID t(s) 1 23 c I2PAKFP u (TO-281) Prod D(2) STFI26N60M2 650 V 165 mΩ 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications te
8	STD26NF10	STMicroelectronics	N-channel Power MOSFET Type STD26NF10 ■ ■ ■ ■ VDSS 100V RDS(on) < 0.038Ω ID 25A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization DPAK 3 1 Description This Power MOSFET series realized with
9	W26NM60	STMicroelectronics	STW26NM60 OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr
10	STF26N60M2	STMicroelectronics	N-channel Power MOSFET Order code VDS RDS(on) max. ID STF26N60M2 650 V 165 mΩ 20 A 3 2 1 TO-220FP D(2) • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications G(1) • Switching applica
11	STF26NM60ND	STMicroelectronics	N-Channel MOSFET Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabiliti
12	W26NM50	STMicroelectronics	N-Channel MOSFET Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A ■ High dv/dt and avalanche capabilities ■ Improved ESD capability ■ Low input capacitance and gate charge Application ■ Switching applications Description MDmesh™ technology applies the be
13	STF26NM60N	STMicroelectronics	N-channel MOSFET Order code STF26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Applications  Switching applications Description This device is an N-channel Power MOSFET dev
14	STW26NM60-H	STMicroelectronics	Power MOSFETs Type STW26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Application ■ Switching applications Description This series of devices impleme
15	STE26N50	STMicroelectronics	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR l Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 26 17 104 300 2.4 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V ( •) Pulse
16	STW26NM60N	STMicroelectronics	N-channel Power MOSFET Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO
17	STP26NM60N	STMicroelectronics	N-channel Power MOSFET Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO
18	STI26NM60N	STMicroelectronics	N-channel Power MOSFET Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO
19	STB26NM60N	STMicroelectronics	N-channel Power MOSFET Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N ■ ■ ■ TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO
20	STP26N60M2	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications