STW26NM60-H |
Part Number | STW26NM60-H |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lo... |
Features |
Type STW26NM60N-H
■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. www.DataSheet4U.com Figure 1. Internal schematic diagram $ '... |
Document |
STW26NM60-H Data Sheet
PDF 712.91KB |
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